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当前位置首页 » 晶振编码查询 » 爱普生晶振编码 » TG2016SMN温补晶振X1G005441021200具有低相位噪声的性能

TG2016SMN温补晶振X1G005441021200具有低相位噪声的性能

返回列表 来源:CEOB2B晶振平台 浏览:- 发布日期:2022-08-25 18:00:22【
晶振是电子产品都得依赖的一款电子器件,它是通常应用到一些高端电子产品当中。削波正弦波形是TCXO最受欢迎的输出选项,这是为什么呢,主要原因有两点.其一是低功耗,低抖动特性,改善了热特性以及更好的老化和频率稳定性能;其二则是比CMOS输出更好的相位噪声性能.也就是说石英晶振在采用削波正玄波作为输出方式之后会极大的减少谐波分量的数量,使得晶振产品具备低相位噪声的性能

日本进口爱普生晶振TG2016SMN,是一款TCXO温度补偿晶振,小体积晶振尺寸2.0x1.6mm有源晶振,四脚贴片晶振,频率范围10MHz至55MHz,电源电压1.8V至3.3V,具有超小型,轻薄型,低电源电压,低功耗,低抖动,低损耗,低耗能,低相位噪声等特性,特别适用于有小型化要求的市场领域,比如智能手机,无线蓝牙,平板电脑,汽车电子,医疗设备等电子数码产品。

TG2016SMN温补晶振X1G005441021200具有低相位噪声的性能

Product Number Model Frequency 爱普生晶振 Output Wave Supply Voltage F.Tol@25°C
X1G005441001200 TG2016SMN 40.000000 MHz 2.00 x 1.60 x 0.61 mm Clipped sine wave 2.800 to 3.630 V +/-1.5 ppm
X1G005441003100 TG2016SMN 19.200000 MHz 2.00 x 1.60 x 0.61 mm Clipped sine wave 2.660 to 2.940 V +/-1.5 ppm
X1G005441003300 TG2016SMN 39.000000 MHz 2.00 x 1.60 x 0.61 mm Clipped sine wave 3.135 to 3.465 V +/-1.5 ppm
X1G005441004700 TG2016SMN 19.200000 MHz 2.00 x 1.60 x 0.61 mm Clipped sine wave 3.135 to 3.465 V +/-1.5 ppm
X1G005441006500 TG2016SMN 38.400000 MHz 2.00 x 1.60 x 0.61 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020100 TG2016SMN 16.368000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020200 TG2016SMN 16.369000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020300 TG2016SMN 19.200000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020400 TG2016SMN 26.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020500 TG2016SMN 32.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020600 TG2016SMN 38.400000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020700 TG2016SMN 40.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441020800 TG2016SMN 16.000000 MHz 2.00 x 1.60 x 0.73 mm TCXO晶振 1.700 to 1.900 V +/-1.5 ppm
X1G005441021100 TG2016SMN 20.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441021200 TG2016SMN 24.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441021300 TG2016SMN 25.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441021400 TG2016SMN 27.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441021500 TG2016SMN 30.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm

TG2016SMN,TG2520SMN

X1G005441021600 TG2016SMN 48.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441022000 TG2016SMN 52.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441022100 TG2016SMN 27.600000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 1.700 to 1.900 V +/-1.5 ppm
X1G005441030100 TG2016SMN 16.368000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030200 TG2016SMN 16.369000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030300 TG2016SMN 19.200000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030400 TG2016SMN 26.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030500 TG2016SMN 32.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030600 TG2016SMN 38.400000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030700 TG2016SMN 40.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441030800 TG2016SMN 16.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031100 TG2016SMN 20.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031200 TG2016SMN 24.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031300 TG2016SMN 25.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031400 TG2016SMN 27.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031500 TG2016SMN 30.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441031600 TG2016SMN 48.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441032000 TG2016SMN 52.000000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm
X1G005441032100 TG2016SMN 27.600000 MHz 2.00 x 1.60 x 0.73 mm Clipped sine wave 2.660 to 3.465 V +/-1.5 ppm

TG2016SMN温补晶振X1G005441021200具有低相位噪声的性能

温补晶振即温度补偿晶体振荡器(TCXO),是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器。

削顶正玄波(Clipped Sine Wave)是有源晶振输出方式的一种,相比方波的谐波分量少很多,但驱动能力较弱,在负载10K/10PF时Vp-p为0.8Vmin.通常为SMD7050,SMD5032,SMD3225等封装的表贴温补晶振使用的输出波形.当然,有源晶振还有CMOS,TTL,ECL,LVDS,正玄波等输出方式,这些输出逻辑方式也各有优缺点,至于如何利用它们我们却是不得而知.所以日本爱普生晶振就推出了相关的技术支持文档,明确指出应当如何在电路设计中应用削顶正玄波.