产品编码 | 型号 | 频率 | 爱普生晶振 | 输出波 | 电源电压 | 精度 | 工作温度 |
X1G005231000400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231000500 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231000900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001000 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001100 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001200 | TG5032CGN | 12.800000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001300 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001500 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001600 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001700 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231001900 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002000 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002300 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002500 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002600 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002700 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002800 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231002900 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003000 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003100 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003200 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 2.700 to 3.000 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003300 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003500 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003600 | TG5032CGN | 19.440000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003700 | TG5032CGN | 30.720000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231003900 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004100 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004200 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004300 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004400 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004600 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004700 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004800 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 2.375 to 2.625 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231004900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to ++85 °C |
X1G005231005000 | TG5032CGN | 26.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0ppm | -40 to +85 °C |
蓝牙AOA定位温度补偿晶振X1G005231003400,5032mm晶振
石英晶体振荡器(以下简称晶振)是利用石英晶体压电效应而制成的器件,它的作用是输出高精度和高稳定度的脉冲信号,为整个电路提供时序基准。我们知道,现在电路中有越来越多的时序电路,它们之间的协同运行必须要有一个时间基准,才能统一一致的行动,就像电视剧里特种行动小队在出发前都要对下表一样,晶振在系统中起的作用就如同队长的手表,它如果稳定性或准确性不好的话,那整个系统就会错误频出,故障率很高。所以又把晶振称为单板的“心脏”。 石英晶体振荡器是由品质因数Q极高的石英晶体谐振器和振荡电路组成。晶体的品质因数、切割取向、晶体振子的结构及电路形式等,共同决定振荡器的性能。国际电工委员会(IEC)将石英晶体振荡器分为4类:普通晶体振荡(SPXO),电压控制式晶体振荡(VCXO),温度补偿式晶体振荡(TCXO),恒温控制式晶体振荡(OCXO)。目前发展中的还有数字补偿式晶体振荡(DCXO)以及混合式的VOCXO振荡等。