高稳定性振荡器SEO32C3A4D1-20.000M适用于高温和极端环境下的应用

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Suntsu松图晶振SEO324系列是我们产品线的最新成员,小体积晶振封装尺寸为3.2×2.5毫米贴片石英晶振，频率范围为1MHz至150MHz，在-40°C至约200°C的温度范围内，频率稳定性为+/-50ppm。该振荡器采用GT-cut技术，可在高达约200℃的扩展温度范围内实现高稳定性。GT-cut振荡器不仅能够保持高稳定性，而且在高冲击和振动下性能更佳，能效更高。SEO324系列石英晶体振荡器可用于高温和极端环境下的应用，如航空电子、井下钻井测量、发动机传感器、遥测、5G、航空航天和工业过程控制。高稳定性振荡器SEO32C3A4D1-20.000M适用于高温和极端环境下的应用

晶振编码查询	包装尺寸	输出	Voltage	Stability	工作温度
SSO32C1A071-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A161-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A171-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	有源晶振	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A271-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A381-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.8V±5%	±50ppm	-30°C - +85°C

高稳定性振荡器SEO32C3A4D1-20.000M适用于高温和极端环境下的应用

SEO324晶振特征：
3.2×2.5毫米SMD封装
频率范围为1MHz至150MHz
CMOS输出 耐高温晶振
提供1.8V、2.5V和3.3V选项
在-40°C至约125°C的温度范围内+/-20ppm，
在-40°C至约200°C的温度范围内为+/-50ppm
低功耗:3.3V时典型值为8mA
应用于：汽车仪表，电动汽车的高温检测，遥感勘测，5G，航空航天，工业过程控制