Abracon宣布推出新的物联网优化石英晶体系列,具有市场上最低的CL和ESR。推出ABM8W、ABM10W、ABM11W、ABM12W、ABS07W、ABS06W系列;行业领先的石英晶体系列。该系列结合了世界上最低的CL和最低的ESR,适用于物联网(IoT)、可穿戴设备和低功耗便携式应用所需的节能处理器、MCU、RF芯片组和实时时钟。
贴片晶振ABMxW和ABSxW系列的推出带来了业界最全面的晶体系列,解决了向低功耗的飞跃。下一代节能MCU和芯片组中的振荡器无法驱动具有更高CL和ESR的传统晶体。将负载电容降至新的行业水平,MHz晶振为4pF,音叉晶振为3pF,同时提供保证的低ESR,使许多缺乏增益和降低跨导(gm)的芯片组能够在设计裕量下工作。这些优化的晶体确保晶体振荡器设计保留足够的裕量,以便在整个温度范围以及所有工艺和电压范围内工作。ABM10W16MHz8D2XT3具有市场上最低的CL和ESR的石英晶体
原厂编码 | 品牌 | 型号 | 系列 | 频率 | 包装/封装 |
ABM10-167-12.000MHZ-T3 | Abracon晶振 | ABM10 | MHz Crystal | 12MHz | 4-SMD, No Lead |
ABM10-166-12.000MHZ-T3 | Abracon晶振 | ABM10 | MHz Crystal | 12MHz | 4-SMD, No Lead |
ABM11-140-26.000MHZ-T3 | Abracon晶振 | ABM11 | MHz Crystal | 26MHz | 4-SMD, No Lead |
ABM11-141-26.000MHZ-T3 | Abracon晶振 | ABM11 | MHz Crystal | 26MHz | 4-SMD, No Lead |
ABM11-143-27.120MHZ-T3 | Abracon晶振 | ABM11 | MHz Crystal | 27.12MHz | 4-SMD, No Lead |
ABM10-16.000MHZ-E20-T | Abracon晶振 | ABM10 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM10-24.000MHZ-E20-T | Abracon晶振 | ABM10 | MHz Crystal | 24MHz | 4-SMD, No Lead |
ABM11-16.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM11-16.000MHZ-9-B1U-T | Abracon晶振 | ABM11 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM11-16.000MHZ-B7G-T | Abracon晶振 | ABM11 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM11-142-27.120MHZ-T3 | Abracon晶振 | ABM11 | MHz Crystal | 27.12MHz | 4-SMD, No Lead |
ABM10-24.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 24MHz | 4-SMD, No Lead |
ABM10-32.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 32MHz | 4-SMD, No Lead |
ABM10-30.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 30MHz | 4-SMD, No Lead |
ABM10-25.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 25MHz | 4-SMD, No Lead |
ABM10-18.432MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 18.432MHz | 4-SMD, No Lead |
ABM10-19.200MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 19.2MHz | 4-SMD, No Lead |
ABM10-22.1184MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 22.1184MHz | 4-SMD, No Lead |
ABM10-26.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 26MHz | 4-SMD, No Lead |
ABM11-20.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 20MHz | 4-SMD, No Lead |
ABM10-16.3676MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 16.3676MHz | 4-SMD, No Lead |
ABM10-16.384MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 16.384MHz | 4-SMD, No Lead |
ABM10-20.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 20MHz | 4-SMD, No Lead |
ABM10-24.576MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 24.576MHz | 4-SMD, No Lead |
ABM11-32.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 32MHz | 4-SMD, No Lead |
ABM11-40.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 40MHz | 4-SMD, No Lead |
ABM11-25.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 25MHz | 4-SMD, No Lead |
ABM11-30.000MHZ-D2X-T3 | Abracon晶振 | ABM11 | MHz Crystal | 30MHz | 4-SMD, No Lead |
特征:
针对节能可穿戴设备和物联网应用进行优化,以极低的电镀电容进行电镀,低至4pF,具有优化的ESR,0.6mm最大高度,非常适合高度受约束的设计,接缝密封,实现长期可靠性
应用:可穿戴设备,物联网(IoT),蓝牙/蓝牙低能耗(BLE),无线模块,机器对机器(M2M)连接,超低功耗MCU,近场通信(NFC),ISM频段
ABM10-16.000MHZ-D30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM10-24.000MHZ-8-7-A15-T | Abracon晶振 | ABM10 | MHz Crystal | 24MHz | 4-SMD, No Lead |
ABM10-22.1184MHZ-E20-T | 无源晶振 | ABM10 | MHz Crystal | 22.1184MHz | 4-SMD, No Lead |
ABM10-16.384MHZ-E20-T | Abracon晶振 | ABM10 | MHz Crystal | 16.384MHz | 4-SMD, No Lead |
ABM10-30.000MHZ-E20-T | Abracon晶振 | ABM10 | MHz Crystal | 30MHz | 4-SMD, No Lead |
ABM11-44.000MHZ-B7G-T | Abracon晶振 | ABM11 | MHz Crystal | 44MHz | 4-SMD, No Lead |
ABM11-28.63636MHZ-B7G-T | Abracon晶振 | ABM11 | MHz Crystal | 28.63636MHz | 4-SMD, No Lead |
ABM11-38.400MHZ-B7G-T | Abracon晶振 | ABM11 | MHz Crystal | 38.4MHz | 4-SMD, No Lead |
ABM10-40.000MHZ-E20-T | Abracon晶振 | ABM10 | MHz Crystal | 40MHz | 4-SMD, No Lead |
ABM10-32.000MHZ-7-A15-T | Abracon晶振 | ABM10 | MHz Crystal | 32MHz | 4-SMD, No Lead |
ABM11-40.000MHZ-B7G-T | Abracon晶振 | ABM11 | MHz Crystal | 40MHz | 4-SMD, No Lead |
ABM10-16.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 16MHz | 4-SMD, No Lead |
ABM10-20.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 20MHz | 4-SMD, No Lead |
ABM10-24.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 24MHz | 4-SMD, No Lead |
ABM10-25.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 25MHz | 4-SMD, No Lead |
ABM10-38.400MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 38.4MHz | 4-SMD, No Lead |
ABM10-40.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 40MHz | 4-SMD, No Lead |
ABM10-48.000MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 48MHz | 4-SMD, No Lead |
ABM10-14.31818MHZ-18-E30-T3 | Abracon晶振 | ABM10 | MHz Crystal | 14.31818MHz | 4-SMD, No Lead |
ABM11-24.000MHZ-18-BY-T3 | Abracon晶振 | ABM11 | MHz Crystal | 24MHz | 4-SMD, No Lead |
ABM11-26.000MHZ-18-BY-T3 | Abracon晶振 | ABM11 | MHz Crystal | 26MHz | 4-SMD, No Lead |
ABM11-38.400MHZ-18-BY-T3 | Abracon晶振 | ABM11 | MHz Crystal | 38.4MHz | 4-SMD, No Lead |
ABS07W-32.768KHZ-D-1-T | Abracon晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
ABS07W-32.768KHZ-D-2-T | Abracon晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
ABS07W-32.768KHZ-J-2-T | 石英晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
ABS07W-32.768KHZ-J-1-T | Abracon晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
ABS07W-32.768KHZ-K-2-T | Abracon晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
ABS07W-32.768KHZ-K-1-T | Abracon晶振 | ABS07W | kHz Crystal (Tuning Fork) | 32.768kHz | 2-SMD, No Lead |
Syed Raza说:“gm(放大器跨导)是决定振荡器环路设计余量的一个关键参数。为了将总功耗降至最低,最新SoC/ C/ P/RFIC/FPGA中采用的技术降低了振荡器环路中的gm值。为了在gm下降时保持原始设计余量,晶体必须满足较低的gm_critical指标。Abracon的性能优化物联网晶体正是通过同时降低这些设备的电镀负载、ESR和电极电容来实现这一目标。毕竟,降低功耗不应以长期可靠性或设计风险为代价。”,“物联网、可穿戴设备和便携式市场要求下一代IC实现节能。这些IC直接受益于这一业界领先的低CL晶体系列,”Abracon营销总监Juan Conchas评论道。石英晶体谐振器ABMxW和ABSxW系列提供多种封装、稳定性和公差选项,精度低至+/-10ppm。这些晶体的整体工作温度高达-40℃至125℃,非常适合消费电子和工业设计。