Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振,美国进口晶振,Silicon品牌晶振,型号:Si535,编码为:535BB125M000DG,频率为:125MHz,电压3.3V,LVDS输出差分晶振,温度稳定性:±20ppm,工作温度范围:-40℃至+85℃,小体积晶振尺寸:7.0x5.0mm封装,六脚贴片晶振,有源晶振,石英晶振,差分晶体振荡器。应用于:蓝牙晶振,10/40/100G数据中心,10G以太网,交换机/路由器,光纤通道/SAS/存储,企业服务器,网络,电信,光模块,无线网络等应用。
Si535 XO利用天空解决方案的先进DSPLL®电路提供一个高速差分频率的超低抖动时钟。与传统的XO不同,每个输出频率都需要一个不同的晶体,而Si535使用一个固定的晶体来提供一个大范围的输出频率。这种基于集成电路的方法允许晶体谐振器提供特殊的频率稳定性和可靠性。此外,DSPLL时钟合成提供了优越的电源噪声抑制,简化了在通信系统中通常发现的噪声环境中产生低抖动时钟的任务。基于Si535 IC的XO在装运时被工厂编程,从而消除了与自定义振荡器相关的长时间的前置时间。
Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振,产品特点:
可选频率从100 MHz到312.5 MHz
具有卓越抖动性能和高功率电源噪声抑制的第三代DSPLL®
频率稳定性是SAW振荡器的3倍
可提供LVPECL和LVDS输出差分晶振
3.3V和2.5V电源选项
行业标准5 x 7 mm封装和引脚
无铅/符合RoHS
Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振,参数表
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
Nominal Frequency1 | fO | LVPECL/LVDS | |
125 | |
MHz | ||||||||||||||||
Initial Accuracy | fi | Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
Temperature Stability1,2 | –7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
Powerup Time3 | tOSC | TA = –40°C — +85°C | 10 | ms |
石英晶体振荡器 | 品牌 | 型号 | 频率 | 电压 | 频率稳定度 | 包装/封装 |
535FB125M000DG | Silicon晶振 | Si535 | 125MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
536BB156M250DG | Silicon晶振 | Si536 | 156.25MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
536FB156M250DG | Silicon晶振 | Si536 | 156.25MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
536AB156M250DG | Silicon晶振 | Si536 | 156.25MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
536EB156M250DG | Silicon晶振 | Si536 | 156.25MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
536BB125M000DG | Silicon晶振 | Si536 | 125MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
536AB125M000DG | Silicon晶振 | Si536 | 125MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
535EB125M000DG | Silicon晶振 | Si535 | 125MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
536EB125M000DG | Silicon晶振 | Si536 | 125MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
535BB125M000DG | Silicon晶振 | Si535 | 125MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
535BB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
535FB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
535AB125M000DG | Silicon晶振 | Si535 | 125MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
535AB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
536FB125M000DG | 石英晶振 | Si536 | 125MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
535EB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 2.5V | ±20ppm | 6-SMD, No Lead |
500DLAA125M000ACF | Silicon晶振 | Si500D | 125MHz | 2.5V | ±150ppm | 6-SMD, No Lead |
500DLAA200M000ACF | Silicon晶振 | Si500D | 200MHz | 2.5V | ±150ppm | 6-SMD, No Lead |
590AB70M6560DG | Silicon晶振 | Si590 | 70.656MHz | 3.3V | ±25ppm | 6-SMD, No Lead |
590FA200M000DG | Silicon晶振 | Si590 | 200MHz | 2.5V | ±50ppm | 6-SMD, No Lead |
590DA156M250DG | Silicon晶振 | Si590 | 156.25MHz | 3.3V | ±50ppm | 6-SMD, No Lead |
591BB300M000DG | Silicon晶振 | Si591 | 300MHz | 3.3V | ±25ppm | 6-SMD, No Lead |
550CD74M2500DGR | Silicon晶振 | Si550 | 74.25MHz | 3.3V | ±50ppm | 6-SMD, No Lead |
514GBB000118AAG | Silicon晶振 | Si514 | 156.25MHz | 2.5V | ±25ppm | 6-SMD, No Lead |
550AE100M000DGR | Silicon晶振 | Si550 | 100MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
550AE100M000DG | Silicon晶振 | Si550 | 100MHz | 3.3V | ±20ppm | 6-SMD, No Lead |
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