SPXO,SG-210SCD,X1G0029210042,60MHz,CMOS,2520mm振荡器,日本进口晶振,EPSON爱普生晶振型号:SG-210SCD,编码为:X1G0029210042,频率为:60.000MHz,小体积晶振尺寸:2.5x2.0x0.8mm封装,四脚贴片晶振,有源晶振,石英晶体振荡器,工作温度范围:-40℃至+85℃,CMOS输出,晶体振荡器(SPXO),具有超小型,轻薄型,低抖动,耐热及耐环境特点,应用于通讯设备,无线网络,蓝牙模块,汽车电子设备,导航仪,智能手机,平板电脑,医疗设备,数码电子,物联网应用等.
SPXO,SG-210SCD,X1G0029210042,60MHz,CMOS,2520mm振荡器,参数图
0
ST =GND
DJ
RJ
RMS
PJ
项目
符号
规格说明
条件
SG-210SED
SG-210SDD
SG-210SCD
输出频率范围
50.000 MHz ~ 80.000 MHz
请联系我们以便获取其它可用频率的相关信息
电源电压
VCC
1.8 V Typ.
2.5 V Typ.
3.3 V Typ.
1.6 V ~ 2.2 V
2.2 V ~ 3.0 V
2.7 V ~ 3.6 V
储存温度
T_stg
-40 oC ~ +125 °C
裸存
工作温度
T_use
-40 oC ~ +85 °C
频率稳定度
f_tol
B :
-20℃~ +70℃
50 × 10-6 , C :
100 × 10-6
M :
-40℃~ +85℃
50 × 10-6 , L :
100 × 10-6
功耗
ICC
6.0 mA Max.
7.0 mA Max.
8.0 mA Max.
无负载条件
待机电流
I_std
10.0 µA Max.
占空比
SYM
45 % ~ 55 %
50 % VCC 级别, L_CMOS
15 pF
输出电压
VOH
VCC -0.4 V Min.
IOH=-8 mA(SCD,SDD),-4 mA(SED)
VOL
0.4 V Max.
IOL= 8 mA(SCD,SDD), 4 mA(SED)
输出负载条件(CMOS)
L_CMOS
30 pF Max.
输入电压
VIH
70 % VCC Min .
VIL
30 % VCC Max.
上升/下降时间
tr/ tf
4 ns Max.
20% VCC~80% VCC 极 L_CMOS=15pF
振荡启动时间
t_str
2 ms Max.
在 90 % VCC 时,所需时间为 0 秒
频率老化
f_aging
3 × 10-6 / year Max.
+25 °C, 第一年, VCC=1.8V ,2.5V, 3.3V
10 × 10-6 / 10 years Max.
+25 °C, 10年, VCC=1.8V ,2.5V, 3.3V
抖动*1
0.1 ps Typ.
0.1 ps Typ.
确定性抖动
3.2 ps Typ.
2.7 ps Typ.
随机抖动
L_CMOS
30 psTyp.
25 psTyp.
峰-峰值
15pF
相位抖动
1.0 ps Max.
频率偏移(频偏):
12kHz ~ 20MHz
SPXO,SG-210SCD,X1G0029210042,60MHz,CMOS,2520mm振荡器,尺寸图
编码 | EPSON晶振 | 频率 | 尺寸 | 输出方式 | 电源电压 |
X1G0029210002 | SG-210SCD | 75.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210008 | SG-210SCD | 75.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210017 | SG-210SCD | 74.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210019 | SG-210SCD | 66.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210022 | SG-210SCD | 62.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210029 | SG-210SCD | 61.895900 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210036 | SG-210SCD | 66.666600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210038 | SG-210SCD | 66.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210042 | SG-210SCD | 60.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210043 | SG-210SCD | 60.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210048 | SG-210SCD | 80.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210053 | SG-210SCD | 66.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210058 | SG-210SCD | 74.176000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210061 | SG-210SCD | 66.666700 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210062 | SG-210SCD | 66.660000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210064 | SG-210SCD石英晶振 | 66.666000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210065 | SG-210SCD | 74.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210069 | SG-210SCD | 50.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210072 | SG-210SCD | 63.710000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210079 | SG-210SCD | 72.578300 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210080 | SG-210SCD | 63.111600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210082 | SG-210SCD | 62.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210083 | SG-210SCD | 59.800000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210085 | SG-210SCD | 63.360000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210086 | SG-210SCD | 50.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210087 | SG-210SCD | 54.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210088 | SG-210SCD | 77.700000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
X1G0029210094 | SG-210SCD | 63.071918 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V |
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