Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振，美国进口晶振，Silicon品牌晶振，型号：Si535，编码为：535BB125M000DG，频率为：125MHz，电压3.3V，LVDS输出差分晶振，温度稳定性：±20ppm，工作温度范围：-40℃至+85℃，小体积晶振尺寸：7.0x5.0mm封装，六脚贴片晶振，有源晶振，石英晶振，差分晶体振荡器。应用于：蓝牙晶振，10/40/100G数据中心，10G以太网，交换机/路由器，光纤通道/SAS/存储，企业服务器，网络，电信，光模块，无线网络等应用。

Si535 XO利用天空解决方案的先进DSPLL®电路提供一个高速差分频率的超低抖动时钟。与传统的XO不同，每个输出频率都需要一个不同的晶体，而Si535使用一个固定的晶体来提供一个大范围的输出频率。这种基于集成电路的方法允许晶体谐振器提供特殊的频率稳定性和可靠性。此外，DSPLL时钟合成提供了优越的电源噪声抑制，简化了在通信系统中通常发现的噪声环境中产生低抖动时钟的任务。基于Si535 IC的XO在装运时被工厂编程，从而消除了与自定义振荡器相关的长时间的前置时间。

Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振，产品特点：

可选频率从100 MHz到312.5 MHz
具有卓越抖动性能和高功率电源噪声抑制的第三代DSPLL®
频率稳定性是SAW振荡器的3倍
可提供LVPECL和LVDS输出差分晶振
3.3V和2.5V电源选项
行业标准5 x 7 mm封装和引脚
无铅/符合RoHS

Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振，参数表

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Nominal Frequency1

fO

LVPECL/LVDS

125

MHz

Initial Accuracy

fi

Measured at +25 °C at time of shipping

—

±1.5

—

ppm

Temperature Stability1,2

–7 –20

— —

+7 +20

ppm

Aging

fa

Frequency drift over first year

±3

ppm

Frequency drift over 20 year life

—

—

±10

ppm

Total Stability2

Temp stability = ±20 ppm

—

—

±31.5

ppm

Temp stability = ±7 ppm

—

—

20

Powerup Time3

tOSC

TA= –40°C — +85°C

10

ms

Si535,535BB125M000DG,7050mm,125MHz,Silicon超低抖动晶振尺寸图

石英晶体振荡器	品牌	型号	频率	电压	频率稳定度	包装/封装
535FB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
536BB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536AB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536EB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536BB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
536AB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
535EB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
536EB125M000DG	Silicon晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535BB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
535BB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
535FB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
535AB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
535AB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB125M000DG	石英晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535EB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
500DLAA125M000ACF	Silicon晶振	Si500D	125MHz	2.5V	±150ppm	6-SMD, No Lead
500DLAA200M000ACF	Silicon晶振	Si500D	200MHz	2.5V	±150ppm	6-SMD, No Lead
590AB70M6560DG	Silicon晶振	Si590	70.656MHz	3.3V	±25ppm	6-SMD, No Lead
590FA200M000DG	Silicon晶振	Si590	200MHz	2.5V	±50ppm	6-SMD, No Lead
590DA156M250DG	Silicon晶振	Si590	156.25MHz	3.3V	±50ppm	6-SMD, No Lead
591BB300M000DG	Silicon晶振	Si591	300MHz	3.3V	±25ppm	6-SMD, No Lead
550CD74M2500DGR	Silicon晶振	Si550	74.25MHz	3.3V	±50ppm	6-SMD, No Lead
514GBB000118AAG	Silicon晶振	Si514	156.25MHz	2.5V	±25ppm	6-SMD, No Lead
550AE100M000DGR	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead
550AE100M000DG	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead